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SK Hynix Launches iHBM to Embed Cooling Elements Inside HBM Packages

Silicon cooling inserts cut thermal resistance by about 30% to ease scaling of next‑generation AI memory.

Overview

  • SK Hynix announced iHBM in late May 2026 as a packaging change that places integrated cooling elements (ICEs) inside high‑bandwidth memory (HBM) stacks to address a hot spot at the die‑to‑die physical interface.
  • The company says ICEs are silicon‑based pieces that conduct heat but not electricity and that placing them at the D2D PHY creates a direct heat path that lowers thermal resistance by about 30 percent.
  • SK Hynix says iHBM is built for manufacturability, using its Wafer Level Packaging and Mass Reflow Molded Underfill processes so customers can adopt the design with minimal package changes.
  • Lower thermal resistance should let HBM operate more stably under sustained high load, which could enable higher sustained clock speeds and denser stacking for AI and HPC workloads if independent tests confirm the company’s figures.
  • The launch targets next‑generation HBM, including HBM5, even as analysts expect HBM5 and a shift to hybrid bonding around 2029–2030 and SK Hynix reports that customer demand now outstrips its near‑term HBM capacity.