Overview
- Samsung and AMD signed an MoU that makes Samsung the preferred HBM4 supplier for AMD’s Instinct MI455X accelerators and adds collaboration on high‑performance DDR5 for next‑generation EPYC servers.
- The companies will explore a potential foundry partnership for future AMD products, with discussions ongoing and no manufacturing agreement finalized.
- Samsung’s HBM4, already in mass production, is built on a 1c DRAM node with a 4 nm base die and targets up to 13 Gbps per pin and 3.3 TB/s bandwidth, while Samsung continues supplying HBM3E for AMD’s MI350‑series GPUs.
- At Nvidia GTC, Samsung publicly showed HBM4E for the first time with stated targets of 16 Gbps per pin and 4.0 TB/s bandwidth and displayed complementary components for Nvidia’s Vera Rubin platform in a dedicated showcase.
- Nvidia CEO Jensen Huang confirmed Samsung is manufacturing the Groq 3 LPU used in Nvidia‑aligned inference systems, as Samsung executives push multi‑year memory supply deals to stabilize the business.