Samsung Delays Full High‑NA EUV Rollout to Its 1nm Node
The company says immature mask, pellicle and materials supply chains and the very high cost of ASML’s tools make it sensible to use existing 0.33‑NA EUV with multi‑patterning for the next two nodes.
Overview
- This week at the Next Generation Lithography + Patterning Conference, Samsung’s Park Chang‑min confirmed the foundry will postpone full commercial use of 0.55 NA High‑NA EUV until its 1nm (A10) node.
- Samsung will rely on current 0.33 NA EUV scanners combined with multi‑patterning for its 2nm and 1.4nm nodes instead of moving to High‑NA for volume production.
- The company cited an immature supporting ecosystem—masks, pellicles and specialized photoresist and metrology tools are not yet ready—and the very high per‑tool cost as the main reasons for the delay.
- Peers show different paths: Intel has used a High‑NA tool selectively since 2024 for research and limited layers, and TSMC has kept most High‑NA units in R&D with broader commercial plans around 2029–2030.
- The shift will lower immediate demand for High‑NA machines and extend industry reliance on multi‑patterning, which could raise process complexity, fab costs and the work suppliers must do to ready masks and pellicles before 1nm mass production around 2030.