Particle.news
Download on the App Store

Roundhill’s DRAM ETF Doubles as HBM Shortage Sends Prices Higher

Soaring demand for high-bandwidth memory and tight wafer capacity have pushed DRAM prices up, leaving concentrated holdings and swap use to amplify investor risk.

Overview

  • The DRAM – Roundhill Memory ETF launched on April 2 and has more than doubled in value by early July, driven by sharp gains across memory makers.
  • The fund holds only about 20 stocks and is heavily concentrated in Micron, SK Hynix and Samsung, which account for roughly three-quarters of the portfolio.
  • Surging demand for high-bandwidth memory (HBM) used with GPUs and AI accelerators is tightening supply because HBM consumes multiple times the wafer capacity of ordinary DRAM.
  • Roundhill has at times used total return swaps and similar derivatives to boost exposure, and it also offers a separate 2x daily leveraged DRAM ETF (RAM), both of which raise volatility for investors.
  • Industry shifts include rising revenues and margins for the big three and new three- to five-year HBM contracts that may smooth cycles somewhat, but the DRAM market has a long history of sharp booms and busts that can quickly reverse gains.