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IISER Pune Grows Large-Area Atom-Thin Bi2O2Se, Enabling Durable Flexible Devices

A peer-reviewed study details a reproducible growth process that yields bendable microscale devices which retain performance under repeated strain.

Overview

  • IISER Pune researchers produced large-area bismuth oxyselenide (Bi2O2Se) nanosheets only a few atomic layers thick for flexible electronics.
  • The team fabricated microscopic devices on Kapton that maintained electrical and light-sensing function after thousands of bending and folding cycles.
  • The growth method was achieved by optimizing temperature, gas flow rate, precursor ratio, and reaction time to obtain stable, ultra-thin films.
  • The work addresses key barriers in 2D materials by combining scale, stability, speed, and mechanical robustness suitable for device fabrication.
  • The findings were published in Small in February 2026 (Avinash Mahapatra et al., DOI: 10.1002/smll.202510537) with funding from DST-SERB.