Overview
- The nanostack, unveiled Thursday, June 25, 2026, comes with lab demonstrations and VLSI papers that IBM says validate ultra‑thin dielectric bonding, dual‑channel engineering and functional CMOS inverters.
- Nanostack is a three‑dimensional, nanosheet‑based transistor architecture that vertically stacks and staggers transistors and bonds two device tiers to pack far more switches into the same die area.
- IBM says the 0.7 nm device holds nearly 100 billion transistors on a fingernail‑sized die and projects up to 50% higher performance or up to 70% better energy efficiency versus its 2 nm node plus about 40% smaller SRAM cells.
- The work is a research breakthrough rather than a shipping product, with tool and process partners named (ASML High‑NA EUV, Lam Research, Tokyo Electron, SCREEN) but no commercial foundry announced and major materials and qualification steps still required.
- If industrialized, the design could ease AI data‑center power and memory bottlenecks by raising on‑chip memory density and lowering power per operation, although bringing new materials and transistor paradigms into mass manufacture has historically taken many years.