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China’s CXMT Says Fifth‑Generation DRAM Platform Enters Mass Production

The G5 process uses quadruple patterning to shrink active‑area spacing to about 11.95 nm, increasing gross dies per wafer and cutting unit costs

Overview

  • CXMT announced Sunday that its fifth‑generation (G5) DRAM platform has entered mass production and that two 24‑gigabit LPDDR5X mobile memory products are already being produced.
  • The company says G5 achieves an active‑area half‑pitch of about 11.95 nanometres using quadruple patterning and can yield at least 50% more gross dies per wafer versus its prior generation.
  • The two new LPDDR5X parts target smartphones and portable devices and each hold roughly 50% more data than CXMT’s previous equivalent chips.
  • Industry trackers put CXMT at about 9.5% of global DRAM revenue in Q2 2026, and the company has expanded 12‑inch fabs in Hefei and Beijing and raised large capital on Shanghai’s STAR Market to scale capacity.
  • Analysts caution the wider competitive impact depends on sustained manufacturing yields, full customer qualification, and CXMT’s ability to move into higher‑end server/HBM products or NAND research and production.